USB FLASH DRIVE
USB FLASH DRIVE
USB flash drives are NAND-type flash memory data storage devices integrated with a USB interface. They are typically small, lightweight, removable and rewritable. Memory capacity typically ranges from 8 megabytes up to 64 gigabytes [1], limited only by current flash memory densities. As capacity increases, so does price, to a point. As of 2006, more recent examples in the 1 to 4 GB range are little more expensive than the 128 MB versions available in 2002.
There are versions which use FireWire as well, but since the IEEE1394 standard is not as ubiquitous as USB, these are less common. USB flash drives have several advantages over other portable storage devices, particularly the floppy disk. They are generally faster, hold more data, and are considered more reliable (due to their lack of moving parts) than floppy disks. These types of drives use the USB mass storage standard, supported natively by modern operating systems such as Linux, Mac OS X, and Windows XP. A flash drive consists of a small printed circuit board encased in a robust plastic or metal casing, making the drive sturdy enough to be carried about in a pocket, as a keyfob, or on a lanyard. Only the USB connector protrudes from this protection, and is usually covered by a removable cap. Most flash drives use a standard type-A USB connection allowing them to be connected directly to a port on a personal computer.
Most flash drives are active only when powered by a USB computer connection, and require no other external power source or battery power source; they are powered using the limited supply afforded by the USB connection. To access the data stored in a flash drive, the flash drive must be connected to a computer, either by direct connection to the computer's USB port or via a USB hub.
The flash drive was first invented in 1998 by Dov Moran, President and CEO of M-Systems Flash Pioneers (Israel). Dan Harkabi, who is now a Vice President at SanDisk, led the development and marketing team at M-Systems. His most significant contribution was that the product be self-reliant and free of the need to install drivers. Nearly simultaneous development of similar products was undertaken at Netac and at Trek 2000, Ltd. All three companies have similar and disputed patents. IBM was the first North American seller of a USB flash drive, and marketed an 8 MB version of the product in 2001 under the "Memory Key" moniker. IBM later introduced a 16 MB version manufactured by Trek 2000, and returned to M-Systems for the 64 MB version in 2003. Lexar can also lay claim to a USB flash drive product. In 2000 they introduced a Compact Flash (CF) card having an internal USB function. Lexar offered a companion card reader and USB cable that eliminated the need for a USB hub.
Essential components
There are typically three parts to a flash drive:
Male type-A USB connector - provides an interface to the host computer.
USB mass storage controller - implements the USB host controller and provides a linear interface to block-oriented serial flash devices while hiding the complexities of block-orientation, block erasure, and wear balancing, or wear levelling, although drives that actually perform this in hardware are rare. The controller contains a small RISC microprocessor and a small amount of on-chip ROM and RAM.
NAND flash memory chip - stores data. NAND flash is typically also used in digital cameras.
Crystal oscillator - produces the device's main 12 MHz clock signal and controls the device's data output through a phase-locked loop.
Additional components
The typical device may also include:
Jumpers and test pins - for testing during the flash drive's manufacturing or loading code into the microprocessor.
LEDs - indicate data transfers or data reads and writes.
Write-protect switches - indicate whether the device should be in "write-protection" mode.
Unpopulated space - provides space to include a second memory chip. Having this second space allows the manufacturer to develop only one printed circuit board that can be used for more than one storage size device, to meet the needs of the market.
USB connector cover or cap - reduces the risk of damage due to static electricity, and improves overall device appearance. Some flash drives do not feature a cap, but instead have retractable USB connectors. Other flash drives have a "swivel" cap that is permanently connected to the drive itself and eliminates the chance of losing the cap.
Transport aid - In some cases, the cap contains the hole suitable for connection to a key chain or lanyard or to otherwise aid transport and storage of the USB flash device.
REF : http://en.wikipedia.org/wiki/Flash_memory
Dept. of Computer Science & Engineering
NAND flash memory chip
Principles of operation
Flash memory stores information in an array of floating gate transistors, called "cells", each of which traditionally stores one bit of information. Newer flash memory devices, sometimes referred to as multi-level cell devices, can store more than 1 bit per cell, by using more than two levels of electrical charge, placed on the floating gate of a cell.
In NOR flash, each cell looks similar to a standard MOSFET, except that it has two gates instead of just one. One gate is the control gate (CG) like in other MOS transistors, but the second is a floating gate (FG) that is insulated all around by an oxide layer. The FG is between the CG and the substrate. Because the FG is isolated by its insulating oxide layer, any electrons placed on it get trapped there and thus store the information. When electrons are on the FG, they modify (partially cancel out) the electric field coming from the CG, which modifies the threshold voltage (Vt) of the cell. Thus, when the cell is "read" by placing a specific voltage on the CG, electrical current will either flow or not flow, depending on the Vt of the cell, which is controlled by the number of electrons on the FG. This presence or absence of current is sensed and translated into 1's and 0's, reproducing the stored data. In a multi-level cell device, which stores more than 1 bit of information per cell, the amount of current flow will be sensed, rather than simply detecting presence or absence of current, in order to determine the number of electrons stored on the FG.
A NOR flash cell is programmed (set to a specified data value) by starting up electrons flowing from the source to the drain, then a large voltage placed on the CG provides a strong enough electric field to suck them up onto the FG, a process called hot-electron injection. To erase (reset to all 1's, in preparation for reprogramming) a NOR flash cell, a large voltage differential is placed between the CG and source, which pulls the electrons off through quantum tunneling. In single-voltage devices (virtually all chips available today), this high voltage is generated by an on-chip charge pump. Most modern NOR flash memory components are divided into erase segments, usually called either blocks or sectors. All of the memory cells in a block must be erased at the same time. NOR programming, however, can generally be performed one byte or word at a time.
NAND Flash uses tunnel injection for writing and tunnel release for erasing. NAND flash memory forms the core of the removable USB interface storage devices known as USB flash drives. As manufacturers increase the density of flash devices, individual cells shrink and the number of electrons in any cell becomes very small. Coupling between adjacent floating gates can change the cell write characteristics. New designs, such as charge trap flash, attempt to provide better isolation between adjacent cells.
Flash memory (both NOR and NAND types) was invented by Dr. Fujio Masuoka while working for Toshiba in 1984. According to Toshiba, the name 'Flash' was suggested by Dr. Masuoka's colleague, Mr. Shoji Ariizumi, because the erasure process of the memory contents reminded him of a flash of a camera. Dr. Masuoka presented the invention at the IEEE 1984 International Electron Devices Meeting (IEDM) held in San Jose, California. Intel saw the massive potential of the invention and introduced the first commercial NOR type flash chip in 1988.
USB flash drives are NAND-type flash memory data storage devices integrated with a USB interface. They are typically small, lightweight, removable and rewritable. Memory capacity typically ranges from 8 megabytes up to 64 gigabytes [1], limited only by current flash memory densities. As capacity increases, so does price, to a point. As of 2006, more recent examples in the 1 to 4 GB range are little more expensive than the 128 MB versions available in 2002.
There are versions which use FireWire as well, but since the IEEE1394 standard is not as ubiquitous as USB, these are less common. USB flash drives have several advantages over other portable storage devices, particularly the floppy disk. They are generally faster, hold more data, and are considered more reliable (due to their lack of moving parts) than floppy disks. These types of drives use the USB mass storage standard, supported natively by modern operating systems such as Linux, Mac OS X, and Windows XP. A flash drive consists of a small printed circuit board encased in a robust plastic or metal casing, making the drive sturdy enough to be carried about in a pocket, as a keyfob, or on a lanyard. Only the USB connector protrudes from this protection, and is usually covered by a removable cap. Most flash drives use a standard type-A USB connection allowing them to be connected directly to a port on a personal computer.
Most flash drives are active only when powered by a USB computer connection, and require no other external power source or battery power source; they are powered using the limited supply afforded by the USB connection. To access the data stored in a flash drive, the flash drive must be connected to a computer, either by direct connection to the computer's USB port or via a USB hub.
The flash drive was first invented in 1998 by Dov Moran, President and CEO of M-Systems Flash Pioneers (Israel). Dan Harkabi, who is now a Vice President at SanDisk, led the development and marketing team at M-Systems. His most significant contribution was that the product be self-reliant and free of the need to install drivers. Nearly simultaneous development of similar products was undertaken at Netac and at Trek 2000, Ltd. All three companies have similar and disputed patents. IBM was the first North American seller of a USB flash drive, and marketed an 8 MB version of the product in 2001 under the "Memory Key" moniker. IBM later introduced a 16 MB version manufactured by Trek 2000, and returned to M-Systems for the 64 MB version in 2003. Lexar can also lay claim to a USB flash drive product. In 2000 they introduced a Compact Flash (CF) card having an internal USB function. Lexar offered a companion card reader and USB cable that eliminated the need for a USB hub.
Essential components
There are typically three parts to a flash drive:
Male type-A USB connector - provides an interface to the host computer.
USB mass storage controller - implements the USB host controller and provides a linear interface to block-oriented serial flash devices while hiding the complexities of block-orientation, block erasure, and wear balancing, or wear levelling, although drives that actually perform this in hardware are rare. The controller contains a small RISC microprocessor and a small amount of on-chip ROM and RAM.
NAND flash memory chip - stores data. NAND flash is typically also used in digital cameras.
Crystal oscillator - produces the device's main 12 MHz clock signal and controls the device's data output through a phase-locked loop.
Additional components
The typical device may also include:
Jumpers and test pins - for testing during the flash drive's manufacturing or loading code into the microprocessor.
LEDs - indicate data transfers or data reads and writes.
Write-protect switches - indicate whether the device should be in "write-protection" mode.
Unpopulated space - provides space to include a second memory chip. Having this second space allows the manufacturer to develop only one printed circuit board that can be used for more than one storage size device, to meet the needs of the market.
USB connector cover or cap - reduces the risk of damage due to static electricity, and improves overall device appearance. Some flash drives do not feature a cap, but instead have retractable USB connectors. Other flash drives have a "swivel" cap that is permanently connected to the drive itself and eliminates the chance of losing the cap.
Transport aid - In some cases, the cap contains the hole suitable for connection to a key chain or lanyard or to otherwise aid transport and storage of the USB flash device.
REF : http://en.wikipedia.org/wiki/Flash_memory
Dept. of Computer Science & Engineering
NAND flash memory chip
Principles of operation
Flash memory stores information in an array of floating gate transistors, called "cells", each of which traditionally stores one bit of information. Newer flash memory devices, sometimes referred to as multi-level cell devices, can store more than 1 bit per cell, by using more than two levels of electrical charge, placed on the floating gate of a cell.
In NOR flash, each cell looks similar to a standard MOSFET, except that it has two gates instead of just one. One gate is the control gate (CG) like in other MOS transistors, but the second is a floating gate (FG) that is insulated all around by an oxide layer. The FG is between the CG and the substrate. Because the FG is isolated by its insulating oxide layer, any electrons placed on it get trapped there and thus store the information. When electrons are on the FG, they modify (partially cancel out) the electric field coming from the CG, which modifies the threshold voltage (Vt) of the cell. Thus, when the cell is "read" by placing a specific voltage on the CG, electrical current will either flow or not flow, depending on the Vt of the cell, which is controlled by the number of electrons on the FG. This presence or absence of current is sensed and translated into 1's and 0's, reproducing the stored data. In a multi-level cell device, which stores more than 1 bit of information per cell, the amount of current flow will be sensed, rather than simply detecting presence or absence of current, in order to determine the number of electrons stored on the FG.
A NOR flash cell is programmed (set to a specified data value) by starting up electrons flowing from the source to the drain, then a large voltage placed on the CG provides a strong enough electric field to suck them up onto the FG, a process called hot-electron injection. To erase (reset to all 1's, in preparation for reprogramming) a NOR flash cell, a large voltage differential is placed between the CG and source, which pulls the electrons off through quantum tunneling. In single-voltage devices (virtually all chips available today), this high voltage is generated by an on-chip charge pump. Most modern NOR flash memory components are divided into erase segments, usually called either blocks or sectors. All of the memory cells in a block must be erased at the same time. NOR programming, however, can generally be performed one byte or word at a time.
NAND Flash uses tunnel injection for writing and tunnel release for erasing. NAND flash memory forms the core of the removable USB interface storage devices known as USB flash drives. As manufacturers increase the density of flash devices, individual cells shrink and the number of electrons in any cell becomes very small. Coupling between adjacent floating gates can change the cell write characteristics. New designs, such as charge trap flash, attempt to provide better isolation between adjacent cells.
Flash memory (both NOR and NAND types) was invented by Dr. Fujio Masuoka while working for Toshiba in 1984. According to Toshiba, the name 'Flash' was suggested by Dr. Masuoka's colleague, Mr. Shoji Ariizumi, because the erasure process of the memory contents reminded him of a flash of a camera. Dr. Masuoka presented the invention at the IEEE 1984 International Electron Devices Meeting (IEDM) held in San Jose, California. Intel saw the massive potential of the invention and introduced the first commercial NOR type flash chip in 1988.
Courtesy & REF : http://en.wikipedia.org/wiki/Flash_memory
posted by Jino @ 12:00 AM
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